Micron e Intel amplían su liderazgo en Memoria Flash 3D NAND (English Only)

News Highlights Intel-Micron delivers the 1st commercially available 1Tb – 4bits/cell (QLC) die in the history of semiconductors Qualification of 4bits/cell 3D NAND on 64 layer 2nd Gen 3D NAND has been completed. 4bits/cell (QLC) provides 33% higher density compared to 3bits/cell (TLC) 3rd Generation 3D NAND uses 96 layers to maintain cost/density leadership 3rd Generation 3D NAND enables … Continued

The post Micron e Intel amplían su liderazgo en Memoria Flash 3D NAND (English Only) appeared first on Intel Latinoamérica Newsroom.



via Intel.

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