Intel en sus 50 años: El 1101 de Intel (English Only)

  » Download all images (ZIP, 6 MB) Intel’s 1101 static random access memory (SRAM) was the first high-volume metal-oxide semiconductor (MOS) memory and the first chip to use silicon gates. The device was the result of a challenging development process. The conceptual groundwork for metal-oxide semiconductor memory had been established before Intel’s founding, but … Continued

The post Intel en sus 50 años: El 1101 de Intel (English Only) appeared first on Intel Latinoamérica Newsroom.



via Intel.

Comentarios

Entradas populares de este blog

Tatuaje produce energía con sudor de la persona

Crean juego 3D sin video

Pequeños robots que trabajan junstos para formar figuras